Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes
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چکیده
We report on high-electrical-stress testing of Nichia GaN/InGaN/AlGaN single-quantum-well (SQW) light-emitting diodes. In contrast to our earlier experiments with double-heterostructure LEDs, the present SQW devices have been improved to the point that the encapsulating plastic fails under high electrical stress earlier than the diode itself. ( 1998 Published by Elsevier Science B.V. All rights reserved.
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تاریخ انتشار 1998